1907  Isazinzulu saseBritane uHenry Joseph Round wafumanisa ukuba i-luminescence inokufumaneka kwiikristale ze-silicon carbide xa kusetyenziswa okwangoku.

1927  Isazinzulu saseRashiya uOleg Lossew kwakhona waphawula “umphumo opheleleyo” wokuphuma kokukhanya.Emva koko waphonononga waza wachaza lo mcimbi ngokubanzi

1935 Usosayensi waseFransi uGeorges Destriau upapashe ingxelo malunga ne-elector-luminescence phenomenon ye-zinc sulfide powder.Ukukhumbula abanduleli, wabiza le mpembelelo "Ukukhanya okulahlekileyo" kwaye ucebise igama elithi "elector-luminescence phenomenon" namhlanje.

1950  Uphuhliso lwefiziksi ye-semiconductor ekuqaleni kweminyaka yee-1950s lubonelele ngophando lwesiseko sethiyori kwizinto zonyulo, ngelixa ishishini le-semiconductor libonelela ngee-wafers ezicocekileyo ze-semiconductor kuphando lwe-LED.

1962  U-Nick Holon yak, Jr. kunye no-SF Bevacqua we-GF Inkampani basebenzisa izinto ze-GaAsP ukwenza ii-diode ezibomvu ezikhupha ukukhanya.Le yi-LED yokuqala ebonakalayo ebonakalayo, ethathwa njengokhokho we-LED yanamhlanje

1965  Urhwebo lwe-infrared ekhupha ukukhanya kwe-LED, kunye nokuthengiswa kwe-red phosphorous gallium arsenide LED kungekudala.

1968  Kwavela ii-LED ze-gallium arsenide ze-nitrogen-doped

1970s  Kukho ii-LED eziluhlaza ze-gallium phosphate kunye nee-silicon carbide ezityheli ze-LED.Ukungeniswa kwezixhobo ezitsha kuphucula ukusebenza kakuhle okukhanyayo kwee-LEDs kwaye kwandise imbonakalo ekhanyayo ye-LEDs ukuya kukukhanya okuorenji, okutyheli kunye nokuluhlaza.

1993  Inkampani yeNichia Chemical Inkampani uNakamura Shuji kunye nabanye baphuhlise i-LED yokuqala eqaqambileyo ye-gallium nitride ye-LED, kwaye emva koko basebenzisa i-indium gallium nitride semiconductor ukuvelisa i-ultra-bright ultraviolet, ii-LED eziluhlaza kunye nohlaza, usebenzisa i-aluminium gallium indium phosphide I-semiconductor ivelise i-LED ebomvu eqaqambileyo kunye nephuzi.Kwaye kwayilwa i-LED emhlophe.

1999  Ukurhweba kwee-LED ezinamandla aphumayo ukuya kuthi ga kwi-1W

Okwangoku Ishishini lehlabathi le-LED lineendlela ezintathu zobugcisa.Eyokuqala yisafire substrate indlela emelwe yiNichia yaseJapan.Okwangoku yeyona teknoloji isetyenziswa kakhulu kwaye ikhulile, kodwa into engalunganga kukuba ayinakwenziwa ngobukhulu obukhulu.Okwesibini yindlela ye-silicon carbide substrate ye-LED emelwe yiNkampani ye-American CREE.Umgangatho wezinto eziphathekayo ulungile, kodwa iindleko zayo eziphathekayo ziphezulu kwaye kunzima ukufezekisa ubungakanani obukhulu.Okwesithathu yi-silicon substrate itekhnoloji ye-LED eyenziwe yi-China Jingneng Optoelectronics, enezibonelelo zexabiso eliphantsi lezinto eziphathekayo, ukusebenza kakuhle, kunye nokuveliswa okukhulu.